| 摘要 |
A circuit configuration includes first and second terminals, a power switch having a control terminal, an electronic switch connected between the control terminal and the second terminal for turning off the power switch at excess temperature, a temperature sensor circuit connected between the first and second terminals and connected to the electronic switch, a switch device connected between the first terminal and the control terminal and a control device connected between the first and second terminals. The control device has an output side connected to the switch device. A semiconductor body includes an n--doped base body having upper and lower main surfaces. An n+-doped layer adjoins the lower main surface of the base body. A first region has p+-doped regions embedded on the upper main surface and n+-doped wells contained in the p+-doped regions to form a vertical power MOSFET with a drain electrode connected to the n+-doped layer. A second region for at least one bipolar transistor has at least one p-doped region on the upper main surface and an n+-doped well embedded in the at least one p-doped region. The at least one bipolar transistor has an emitter electrode connected to the n+-doped layer in the second region, a base electrode connected to the p-doped region, and a collector electrode connected to the n+-doped well.
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