Thick film copper metallization for microwave power transistor packages
摘要
A heat dissipating module and package for power microwave transistors and method of making same that includes a substrate having a thick copper layer bonded to a ceramic core which is thereto subjected to high processing temperatures.
申请公布号
US5814880(A)
申请公布日期
1998.09.29
申请号
US19930011094
申请日期
1993.01.29
申请人
NORTHROP GRUMMAN CORPORATION
发明人
COSTELLO, JOHN A.;BUHAY, HARRY;PAPANIA, RICHARD R.;RAI-CHOUDHURY, PROSENJIT;PETROSKY, KENNETH J.;MADIA, GENE A.