发明名称 Thick film copper metallization for microwave power transistor packages
摘要 A heat dissipating module and package for power microwave transistors and method of making same that includes a substrate having a thick copper layer bonded to a ceramic core which is thereto subjected to high processing temperatures.
申请公布号 US5814880(A) 申请公布日期 1998.09.29
申请号 US19930011094 申请日期 1993.01.29
申请人 NORTHROP GRUMMAN CORPORATION 发明人 COSTELLO, JOHN A.;BUHAY, HARRY;PAPANIA, RICHARD R.;RAI-CHOUDHURY, PROSENJIT;PETROSKY, KENNETH J.;MADIA, GENE A.
分类号 H01L21/58;H01L23/057;H01L23/373;H01L25/07;(IPC1-7):H01L23/14 主分类号 H01L21/58
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