发明名称 SURFACE ACOUSTIC WAVE DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a surface acoustic wave device capable of coping with a high frequency. SOLUTION: The device is provided with a single crystal or polycrystal substrate, a piezoelectric thin film formed on the single crystal or polycrystal substrate, and interdigital electrodes made of a conductive film formed on the piezoelectric thin film. In this case, a single crystal or polycrystal diamond substrate is adopted for the single crystal or polycrystal substrate, and a lead zirconate titanate (PZT) or lead titanate (PT) made by the sol-gel method is adopted for the piezoelectric thin film. Or as required, a lead zirconate titanate (PZT) or lead titanate (PT) thin film whose thickens is 0.3-5μm made by the sol-gel method is adopted for the piezoelectric thin film.
申请公布号 JPH10256871(A) 申请公布日期 1998.09.25
申请号 JP19970058980 申请日期 1997.03.13
申请人 MITSUBISHI MATERIALS CORP 发明人 TSUZUMI SHUJI;HANASHIMA NAOYUKI;YONEZAWA MASA
分类号 C04B35/46;C04B35/49;H03H3/08;H03H9/25 主分类号 C04B35/46
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