发明名称 WAFER WITH LASER MARK
摘要 <p>PROBLEM TO BE SOLVED: To easily judge the crystal orientation and specification of a wafer, without influencing the residual machining strain or thermal stress thereon, by finishing the marginal chamfered part of the wafer in a mirror surface, and engraving crystal orientation judging laser marks on the chamfered part. SOLUTION: A wafer 1 is finished in a mirror surface at the marginal edge to form a chamfered part 2 having an engraved crystal orientation judging mark 3 or wafer identifying mark 4 formed by the laser marking as a hard or soft laser mark. The hard laser mark is formed by a high laser power into the chamfered surface and finishing in a mirror surface at a depth of 10μm or more. The soft laser mark is formed by a lower laser power at a depth of approximately 3μm or less into the chamfered mirror surface.</p>
申请公布号 JPH10256105(A) 申请公布日期 1998.09.25
申请号 JP19970055994 申请日期 1997.03.11
申请人 SUPER SILICON KENKYUSHO:KK 发明人 OISHI HIROSHI;ASAKAWA KEIICHIRO
分类号 H01L21/02;C30B33/00;H01L23/544;(IPC1-7):H01L21/02 主分类号 H01L21/02
代理机构 代理人
主权项
地址