| 摘要 |
PROBLEM TO BE SOLVED: To provide a low cost semiconductor inertial sensor requiring no laser processing of wafer, suitable for high volume production, having a low parasitic capacitance and produced with an excellent dimensional accuracy. SOLUTION: A glass spacer layer 13 is formed on a glass substrate 10 and a grove 11 is formed. Selectively etching and removing a single crystal silicon layer 23 bonded to the second silicon wafer 22 through an oxide film 20, a movable electrode 26 made of single crystal silicon is formed on the oxide film 20 and a pair of fixed electrode 27 and 28 made of single crystal silicon are formed on the both hands of the movable electrode. The structure 24 having the second silicon wafer 22, the oxide film 20, the movable electrode, and the fixed electrode is bonded to the glass substrate through the glass spacer layer 13 so that the movable electrode is opposed to the groove on the glass substrate. Etching and removing the second silicon wafer and the oxidation film, the semiconductor inertial sensor 30 being between each fixed electrode and having the movable electrode floating above the glass substrate is manufactured. |
