III-NITRIDE SUPERLATTICE STRUCTURES

摘要

The performance of electronic devices, such as HEMT, HBT, MOSFET, MESFET, Schottky diodes and optoelectric devices such as laser diodes, LEDs, photodetectors, waveguides and switches may be enhanced through the use of modulation doped heterostructures by doping the barrier layer while leaving active layers undoped. The enhancement of the electron mobility is disclosed herein through the use of an AlxGa1-xN/GaN heterostructure. In using doped p-type GaxAP1-xN confinement layer of devices, a superlattice of GaN-GaxAP1-xN controls the p-type concentration in GaxAl1-xN layers. To do this, an undoped semi-insulating GaN film is grown, followed by a few ANGSTROM thick undoped AlxGa1-xN spacers and then a few hundred ANGSTROM thick ternary barrier layer (0 cm<-3>). Electron mobilities of SIMILAR 1000 cm<2>/Vs at room temperature and higher than 2000 cm<2>/Vs at 77 K have been measured after varying thickness, doping level of the AlxGa1-xN barrier layer and the thickness of the spacer.