| 摘要 |
<p>The semiconductor memory device is improved by forming a capacitance being necessary for allowing a high-speed operation without the problem of generated noise by arranging a main supply voltage section of a first supply voltage line (Vcc) and a main supply voltage section of a second supply voltage line (Vss) in parallel to each other and sub-supply voltage sections extending from the first and second supply voltage sections, respectively, so as to be engaged with each other. <IMAGE></p> |
