| 摘要 |
PROBLEM TO BE SOLVED: To improve characteristics of a semiconductor light emitting device like a semiconductor microresonator light emitting element, by forming a multilayered film of material capable of crystal growth by specifying the thickness of a third semiconductor region. SOLUTION: On a substrate 1, 20 periods of low refractive index layers 2 and high refractive index layers 3 are laminated, and an N-type Bragg reflector 4 is formed. The thickness of each layer is 1/4 of the effective wavelength λeff , which is equal to a value obtained by dividing the wavelength in vacuum by the refractive index of medium. A half-wavelength resonator 8 constituted of a low refractive index layer 5, a quantum well layer 6 and a low refractive index layer 7 is formed. The thickness (d) of the resonator 8 is desirable to be in the range of 0.49λeff <=d<=0.51λeff . This effective wavelength λeff is the average wavelength in the respective layers constituting the cavity 8. Continuously 20 periods of high refractive index layers 9 and low refractive index layers 10 are laminated. Finally an N-type electrode 12 and a P-type electrode 13 are formed. |
