发明名称 Semiconductor device and method of farbricating the same
摘要 A semiconductor device includes an interlevel film constituted by a first dielectrics film containing dangling bonds and a bonded group of Si and hydrogen, and a second dielectrics film formed on the first dielectrics film.
申请公布号 US5811872(A) 申请公布日期 1998.09.22
申请号 US19960594947 申请日期 1996.01.31
申请人 NIPPON TELEGRAPH AND TELEPHONE CORPORATION 发明人 MACHIDA, KATSUYUKI;MURASE, KATSUMI;SHIMOYAMA, NOBUHIRO;TSUCHIYA, TOSHIAKI;TAKAHASHI, JUNICHI;MINEGISHI, KAZUSHIGE;TAKAHASHI, YASUO;NAMATSU, HIDEO;IMAI, KAZUO
分类号 H01L21/3105;H01L21/316;H01L21/768;H01L23/532;(IPC1-7):H01L23/58 主分类号 H01L21/3105
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