| 发明名称 |
Semiconductor device and manufacturing process thereof |
| 摘要 |
A silicon oxide film is formed on a wire array by CVD employing a gas mixture composed of a gas containing silicon atoms and hydrogen peroxide, and the thickness of the silicon oxide film in the region apart from the wire array is formed to be at least 50% of the wire thickness. Planarization of the silicon oxide film over the wire array region is attained.
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| 申请公布号 |
US5811849(A) |
申请公布日期 |
1998.09.22 |
| 申请号 |
US19960630689 |
申请日期 |
1996.04.12 |
| 申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
MATSUURA, MASAZUMI |
| 分类号 |
H01L21/3205;H01L21/316;H01L21/768;H01L21/8242;H01L23/522;H01L27/108;(IPC1-7):H01L27/108;H01L29/00 |
主分类号 |
H01L21/3205 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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