发明名称 |
Method of forming a capacitor of a dram cell |
摘要 |
The present invention relates to a stacked capacitor of a DRAM cell, particully remarkably increasing a surface area of a storage electrode of a stacked capacitor without increasing an occupation area and a complexity of fabrication thereof. According to the invention, by use of depositing a protection polysilicon layer on a rugged polysilicon layer, which can provide an increased surface area of a storage electrode, a chemical oxide layer underlying the rugged polysilicon layer is protected by the protection polysilicon layer during a HF dip and thus a peeling of the rugged polysilicon layer as a result of the chemical oxide loss will not occur, thereby preventing a production yield loss.
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申请公布号 |
US5811344(A) |
申请公布日期 |
1998.09.22 |
申请号 |
US19970789495 |
申请日期 |
1997.01.27 |
申请人 |
MOSEL VITELIC INCORPORATED |
发明人 |
TU, TUBY;CHEN, KUANG-CHAO;WANG, MAY |
分类号 |
H01L21/02;H01L21/8242;(IPC1-7):H01L21/72 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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