| 摘要 |
PURPOSE:To obtain a metal layer etching method to obtain a junction terminal having sufficient junction strength with an external terminal by etching the metal layer provided on the substrate such as a semiconductor device and the like. CONSTITUTION:After arranging a wafer 10, on which a gold bump electrode 16 is formed, in a vacuum device, plasma is generated by introducing reactive ion gas, and the surface of the bump electrode 16 and a gold thin film 16a, which is a base layer, are etched. By using the mixture of halogenated gas consisting of a kind selected from CF4, C2F6, C3F8, CHF3 and SF6 and chlorine gas, consisting at least of a kind selected from CF,Cl, CF2Cl2, CFCl3, HCl and CCl4 as reactive ion gas, the gold thin film 16a can be removed, and at the same time, a microscopic V-shaped deep groove is formed on the surface of the bump electrode 16. Junction strength can be improved by the bonding agent inroaded into the V-shaped groove of the bump electrode when the bump- electrode 16 and an external terminal are junctioned. |
