Producing a notch-free wafer comprises: (a) milling a longitudinal notch (1) at a position on the crystal periphery corresponding to a predetermined crystal orientation, during grinding of the crystal periphery; (b) slicing the crystal into wafers;(c) laser engraving an orientation indicating marking (2) at a position corresponding to the bottom of the notch; and (d) removing the wafer edge, together with the notch, to produce a round wafer (7).
申请公布号
DE19810546(A1)
申请公布日期
1998.09.17
申请号
DE1998110546
申请日期
1998.03.11
申请人
SUPER SILICON CRYSTAL RESEARCH INSTITUTE CORP., ANNAKA, GUNMA, JP