发明名称 Notch-free marked wafer production
摘要 Producing a notch-free wafer comprises: (a) milling a longitudinal notch (1) at a position on the crystal periphery corresponding to a predetermined crystal orientation, during grinding of the crystal periphery; (b) slicing the crystal into wafers;(c) laser engraving an orientation indicating marking (2) at a position corresponding to the bottom of the notch; and (d) removing the wafer edge, together with the notch, to produce a round wafer (7).
申请公布号 DE19810546(A1) 申请公布日期 1998.09.17
申请号 DE1998110546 申请日期 1998.03.11
申请人 SUPER SILICON CRYSTAL RESEARCH INSTITUTE CORP., ANNAKA, GUNMA, JP 发明人 OISHI, HIROSHI, ANNAKA, GUNMA, JP;ASAKAWA, KEIICHIRO, ANNAKA, GUNMA, JP
分类号 H01L21/02;C30B33/00;H01L21/304;H01L23/544;(IPC1-7):H01L23/544 主分类号 H01L21/02
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