发明名称 |
Method for selective deposition of refractory metal and device formed thereby |
摘要 |
A method and the device produced by the method of selective refractory metal growth/deposition on exposed silicon, but not on the field oxide is disclosed. The method includes preconditioning a wafer in a DHF dip followed by the steps of 1) selectively depositing a refractory metal on the exposed surfaces of the silicon substrate by reacting a refractory metal halide with the exposed surfaces of said silicon substrate; 2) limiting silicon substrate consumption by reacting the refractory metal halide with a silicon containing gas; and 3) further increasing the refractory metal thickness by reacting the refractory metal halide with hydrogen. Through an adequate pretreatment and selection of the parameters of 1) temperature; 2) pressure; 3) time; 4) flow and 5) flow ratio during each of the deposition steps, this invention adequately addresses the difficulties of uneven n+ versus p+ (source/drain) growth, deep consumption/encroachment by the refractory metal into silicon regions (e.g., worm holes), poor adhesion, uncontrolled selectivity and uneven morphology.
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申请公布号 |
US5807788(A) |
申请公布日期 |
1998.09.15 |
申请号 |
US19960753128 |
申请日期 |
1996.11.20 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
BRODSKY, STEPHEN BRUCE;CONTI, RICHARD ANTHONY;SUBBANNA, SESHADRI |
分类号 |
C23C16/04;H01L21/28;H01L21/285;H01L21/336;H01L21/60;H01L21/8238;H01L27/092;H01L29/78;(IPC1-7):H01L21/44 |
主分类号 |
C23C16/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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