Photo mask and apparatus for repairing photo mask

摘要

A method of repairing a defect existing on a photo mask comprising a transparent substrate and a mask pattern formed on the substrate, comprises steps of irradiating a focused ion beam toward the defect and supplying XeF2 gas to the defect, when an etching rate of the defect by the focused ion beam and XeF2 is 1.7 times greater than an etching rate by a sole irradiation of the focused ion beam.