Intergrated circuit interconnect via structure having low resistance

摘要

Interconnect via structures in a semiconductor integrated circuit having low resistance. The interconnect via structures connect metal layer structures in the semiconductor device and extend down at least one side of the metal layer structures. The interconnect via structures can extend down a second side of the metal layer structures and can extend down the end of the metal layer structures. The interconnect via structures extend beyond the sides and the end of the metal layer structures by a distance u where u is +E,fra 1/4+EE to +E,fra 1/2+EE F, where F is a feature of the design rule being used to manufacture the semiconductor device.