| 摘要 |
PROBLEM TO BE SOLVED: To enable a substrate and semiconductor layers to be lessened in lattice deviation when the semiconductor layers whose lattice constants are different from that of the substrate are laminated on the substrate to obtain a semiconductor light emitting device excellent in luminous efficiency by a method wherein a gradient layer whose composition changes gradually from that of a lower layer to that of an upper layer is provided at a boundary between the lower and upper layer of the laminated semiconductor layers. SOLUTION: Semiconductor layers 2 to 5 which form a light emitting region are laminated on the surface of a substrate 1, and gradient layers 13, 14, and 15a which change gradually in composition so as to approximate to the upper layer of the semiconductor layers different from each other in composition are provided between the semiconductor layers. A P-side electrode 8 is provided to the surface of the laminated semiconductor layers through the intermediary of a diffusion metal layer 7, and an N-type electrode 9 is formed on an N-type layer 3 exposed by partly removing the laminated semiconductor layers 3 to 5, 13 to 15a. By this setup, even a semiconductor light emitting device where semiconductor layers different from each other in lattice constant are laminated is capable of keeping the semiconductor layers free from lattice distortion, improving carriers in traveling speed, and being enhanced in luminous efficiency. |
