| 摘要 |
<p>A method for manufacturing semiconductor integrated circuit device, wherein a thin oxide film which has a thickness not larger than 5 nm and essentially becomes the gate insulating film of a MOS transistor is formed on the main surface of a semiconductor wafer, at such an oxide film growing speed that the reproducibility of the formation of the oxide film and the uniformity of the thickness of the oxide film can be secured, by supplying an oxidizing speed containing water generated from hydrogen and oxygen through a catalytic action at a low concentration to the main surface of the semiconductor wafer or its vicinity.</p> |
