| 摘要 |
PROBLEM TO BE SOLVED: To obtain a semiconductor inertia sensor which eliminates the need for a wafer pasting operation and a laser beam machining operation, which is suitable for high volume production and which is low-cost and to obtain a semiconductor inertia sensor whose parasitic capacitance is low and which is high in sensitivity and high in accuracy. SOLUTION: A second silicon wafer 22 is pasted on one face of a first silicon wafer 21 in which films 30 such as oxide films, nitride films or the like are formed on both faces, the other face of the first silicon wafer is polished, a single-crystal silicon layer 23 is formed, a structure 24 which contains the single- crystal silicon layer is bonded to a glass substrate 10 in such a way that the single-crystal silicon layer is faced with a recess 11 on the glass substrate 10, and the second silicon wafer and the films 20 are removed. When the exposed single-crystal silicon layer is etched and removed selectively, a semiconductor inertia sensor 30 which is provided with fixed electrodes 27, 28 and with a moving electrode 26 sandwiched between them and which is levitated at the upper part of the glass substrate is obtained. |
