| 摘要 |
PROBLEM TO BE SOLVED: To improve the outward luminous efficiency of a light emitting element, by blocking the injection of an electric current into an area immediately below a p-type bonding electrode for p-type gallium nitride compound semiconductor layer and, on the other hand, only injecting the electric current into an area where the semiconductor layer is in ohmic contact with a translucent electrode. SOLUTION: In a gallium nitride compound semiconductor light emitting element, a buffer layer 7, an N-type gallium nitride compound semiconductor layer 8, and a P-type gallium nitride compound semiconductor layer 9 are successively formed in this order on an insulating substrate composed of a sapphire substrate 6. In addition, a Schottky electrode 2a is formed on the surface of the semiconductor layer 9, namely, on the light emitting translucent surface 3 of the light emitting element, and a P-type bonding electrode 2b is formed on the electrode 2a. |
