| 摘要 |
<p>A gallium nitride semiconductor laser element which is provided with an active layer (6) made of a nitride semiconductor containing at least indium and gallium between an n-type clad layer (5) and a p-type clad layer (9). The active layer (6) is composed of two quantum well layers (14) and a barrier layer (15) put between the layers (14) and constitutes the oscillating section of the semiconductor laser element. The preferable thicknesses of the quantum well layers (14) and the barrier layer (15) are not longer than 10 nm. In this semiconductor laser element, electrons and holes can be uniformly distributed in the two quantum well layers (14) and, in addition, the injection of electrons and holes into the quantum well layers (14) can be effectively performed when the electrons and the holes injected into the layers (14) have already been dissipated by recombination. Consequently, the semiconductor laser element has an excellent laser oscillation characteristic.</p> |
