| 摘要 |
A multiple crown shaped polysilicon structure, used for a lower electrode of a DRAM stacked capacitor structure, has been developed. The multiple crown shaped, lower electrode, is formed overlying, and contacting a polysilicon fill layer, that is located between insulator encapsulated polycide gate structures. The polysilicon fill layer, in turn, contacts an underlying source/drain region of a transfer gate transistor. The multiple crown shaped lower electrode is comprised vertical polysilicon shapes, connected to an underlying, horizontal polysilicon shape, with the horizontal polysilicon shape overlying the polysilicon fill layer. One to three, vertical polysilicon shapes, are used on each side of the multiple crown shaped lower electrode.
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