| 摘要 |
PROBLEM TO BE SOLVED: To eliminate the need of a heat treatment for forming a layer type perovskite after an upper electrode is formed by a method wherein after a bismuth layer type compound precursor layer is formed, the precursor layer is rapidly heat-treated. SOLUTION: A coating film 12 is formed on a substrate 11 and thereafter (S1), the film 12 is dried to form (S2) an StBi2 Ta2 O9 precursor layer 13. After that, the layer 13 is heated by an RTA in an oxygen atmosphere. As a result, the layer 13 is changed in phase into a layer type perovskite and a bismuth layer type ferroelectric SrBi2 Ta2 O9 film 14 is formed. It is judged (S4) whether the film 14 reaches a desired thickness or not; in the case where the film 14 does not reach the desired thickness, each process between the S1 process and the S3 process is repeatedly executed. In the case where the film 14 reaches the desired thickness, the crystallization of the film 14 is accelerated (S5). After that, an upper electrode 15 is formed (S6) on the film 14 which is a ferroelectric film. |
