发明名称 |
LOW REFRACTIVE INDEX SIO2 FILM AND ITS PRODUCTION |
摘要 |
PROBLEM TO BE SOLVED: To provide an SiO2 film having a refractive index lower than that of a conventional film by using a raw material used in the formation of the SiO2 film. SOLUTION: Gas containing F-atom, gas wherein a part or all of H-atoms of an alkyl group having 1-4 Si-atoms and carbon atoms or an alkyl group are substituted by F-atoms and gas containing O-atoms are used as raw material gases and subjected to a plasma CVD method within a vacuum chamber 1 to form an SiO2 film on a web in a plasma zone 5. The obtained SiO2 film has one or more kind of a low refractive index element selected from an alkyl group having 1-4 F-atoms and C-atoms or a group wherein a part or all of H-atoms of an alkyl group having 1-4 C-atoms are substituted by F-atoms introduced thereinto and has a refractive index lower than that of an SiO2 film into which no refractive index element is introduced. |
申请公布号 |
JPH10230561(A) |
申请公布日期 |
1998.09.02 |
申请号 |
JP19970315992 |
申请日期 |
1997.10.31 |
申请人 |
DAINIPPON PRINTING CO LTD |
发明人 |
ICHIMURA KOJI |
分类号 |
B32B7/02;B32B9/00;C03C17/245;C23C16/40;C23C16/42;G02B1/11 |
主分类号 |
B32B7/02 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|