STRUCTURE OF SEMICONDUCTOR SUBSTRATE AND MANUFACTURE OF THE SAME

摘要

PROBLEM TO BE SOLVED: To provide an optimum semiconductor substrate that can be used for an intelligent hybrid power IC for a high voltage and large current resistant power device and a peripheral circuit device controlling the power device. SOLUTION: One semiconductor substrate 1 of two semiconductor substrate tightly jointed by their mirror polished face each other has an insulation layer 2 partially on the main surface that is the jointed face. The insulation layer 2 is located rear from the main surface of the semiconductor substrate 1 and the size of the pattern made by the hybrid mounting of the regions the insulated layer 2 and non-insulated layer 2 is made less than about 1mm<2> .