发明名称 |
Deposition of high quality diamond film on refractory nitride |
摘要 |
An adhering, continuous diamond film of optical or semiconductor quality is deposited on a substrate by forming on the substrate a layer of a nitride and then depositing diamond on the nitride without mechanical treatment or seeding of the substrate or the nitride. A substrate of silicon or silicon carbide has been used by depositing a layer of silicon dioxide directly on the substrate and then directly depositing the nitride layer on the silicon dioxide. A polycrystalline diamond film has been deposited by heating the substrate and nitride layer in a vacuum chamber containing a microwave activated mixture of hydrogen and a gas including carbon with the nitride being a refractory nitride to withstand the temperature at which the diamond is deposited. Deposition of the diamond is facilitated by adding oxygen to the mixture after a sufficient thickness of diamond is deposited to protect the nitride layer from oxidation.
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申请公布号 |
US5800879(A) |
申请公布日期 |
1998.09.01 |
申请号 |
US19910702208 |
申请日期 |
1991.05.16 |
申请人 |
MORAN, MARK B.;JOHNSON, LINDA F.;KLEMM, KARL A. |
发明人 |
MORAN, MARK B.;JOHNSON, LINDA F.;KLEMM, KARL A. |
分类号 |
C23C16/02;C23C16/27;(IPC1-7):B05D3/06;C23C16/26 |
主分类号 |
C23C16/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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