| 摘要 |
A form simulation device comprising a bulk plasma analytical unit making an analysis of a bulk plasma region and calculating potential, density of particles and change of sheath length with time within plasma when RF bias is given there, a sheath plasma analytical unit deciding the type of incident particle on the basis of the obtained particle density, a surface reaction calculation unit deciding absorbed material on the surface of the material to be etched, which the incident particle collides with and deciding the type of reaction between the absorbed material and the incident particle decided by the sheath plasma analytical unit, and a form calculation unit calculating the form of the material to be etched depending on the type of reaction decided by said surface reaction calculation unit.
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