发明名称 |
Multilevel electronic structures containing copper layer and copper-semiconductor layers |
摘要 |
A low temperature annealed Cu silicide or germanide layer on the surface of a single crystalline semiconductor substrate of Si or Ge is used in interconnection metallization for integrated circuits. The Cu silicide or germanide layer is preferably formed by heating Cu deposited on a Si or Ge substrate up to about 200 DEG C. for about 30 minutes. The layer demonstrates superior (near ideal) current/voltage characteristics and can be used as a high temperature (600-800 DEG C.) stable Ohmic/Schottky contact to Si or as a Cu diffusion barrier. Additional embodiments involve a Cu layer on a Ge layer on Si substrate, a Cu layer on a Six Ge1-x layer on a substrate, and the use of an intermediate layer of a refractory metal such as W.
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申请公布号 |
US5801444(A) |
申请公布日期 |
1998.09.01 |
申请号 |
US19960756829 |
申请日期 |
1996.11.20 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
ABOELFOTOH, MOHAMED OSAMA;KRUSIN-ELBAUM, LIA;SUN, YUAN-CHEN |
分类号 |
H01L21/28;H01L21/285;H01L21/768;H01L23/485;H01L23/532;H01L29/45;H01L29/47;H01L29/49;(IPC1-7):H01L23/48 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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