发明名称 |
Device having a self-aligned gate electrode wrapped around the channel |
摘要 |
A semiconductor device includes an insulating support. A strip of semiconductor material has two ends in contact with the insulating support and a midsection extending between the ends. A dielectric layer encircles the midsection, and a conductive layer encircles the dielectric layer. The conductive layer has a substantially constant width such that a gate electrode formed within the conductive layer is fully self-aligned with drain and source regions formed within the ends.
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申请公布号 |
US5801397(A) |
申请公布日期 |
1998.09.01 |
申请号 |
US19950452893 |
申请日期 |
1995.05.30 |
申请人 |
SGS-THOMSON MICROELECTRONICS, INC. |
发明人 |
CUNNINGHAM, JAMES A. |
分类号 |
H01L21/265;H01L21/336;H01L29/423;H01L29/786;(IPC1-7):H01L29/76;H01L31/036;H01L27/01;H01L27/12 |
主分类号 |
H01L21/265 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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