发明名称 |
RESISTANCE VARIABLE MEMORY CELL STRUCTURES AND METHODS |
摘要 |
<p>Resistance variable memory cell structures and methods are described herein. One or more resistance variable memory cell structures include a first electrode common to a first and a second resistance variable memory cell, a first vertically oriented resistance variable material having an arcuate top surface in contact with a second electrode and a non-arcuate bottom surface in contact with the first electrode; and a second vertically oriented resistance variable material having an arcuate top surface in contact with a third electrode and a non-arcuate bottom surface in contact with the first electrode.</p> |
申请公布号 |
SG185728(A1) |
申请公布日期 |
2012.12.28 |
申请号 |
SG20120086286 |
申请日期 |
2011.05.09 |
申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
MARSH, EUGENE, P.;QUICK, TIMOTHY, A. |
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