| 摘要 |
<p>A semiconductor charge-control device (10) is provided. The device includes a first layer (12) of a Periodic Table Group III nitride of a first conductivity type and a first doping level which forms a drift region of the semiconductor charge-control device and a second layer (16) of the Periodic Table Group III nitride of a second conductivity type and a second doping level at least one order of magnitude above the first doping level, said second layer being disposed on a first side of the first layer. The device also includes a third layer (14) of the Periodic Table Group III nitride of the first conductivity tye and a doping level of at least twice the doping level of the first layer, said third layer being disposed on the second side of the first layer.</p> |
