PROCESS OF TUNGSTEN CHEMICAL VAPOR DEPOSITION ONTO TITANIUM NITRIDE SUBSTRATE

摘要

A process for chemical vapor deposition of blanket tungsten thin films on titanium nitride proceeds by hydrogen reduction of tungsten hexafluoride at temperatures between 200 DEG C and 500 DEG C. Tungsten film nucleation is preferably facilitated by a plasma treatment of the titanium nitride surface of the substrate, preferably with a hydrogen plasma. The plasma treatment may be carried out in a separate etch chamber and transferred to a tungsten CVD chamber without intervening exposusre to air, or, preferably, is carried out with a low energy etch performed with the substrate mounted on a susceptor in the chamber of the tungsten CVD reactor at which the tungsten film is to be applied.