摘要 |
<p>PCT No. PCT/DE94/01274 Sec. 371 Date May 10, 1996 Sec. 102(e) Date May 10, 1996 PCT Filed Oct. 28, 1994 PCT Pub. No. WO95/13525 PCT Pub. Date May 18, 1995With the proposed method, a masking device (5) with an aperture (6) is placed on the substrate (8), the masking device (5) and the region to be etched (90) on the substrate surface (9) forming a hollow chamber (11) which communicates with the reaction chamber (4) only via the aperture (6). The recess (10) is produced with the aid of corrosive radicals produced in the reaction chamber. In this way, a recess (10) with a smooth and precisely adjustable depth contour is obtained.</p> |