| 摘要 |
<p>A fast operating, electronic protection device (1) against overvoltages, intended for a power transistor (M1) having at least one control terminal (G) of the MOS type, is of the type which comprises a Zener diode (Z1) associated with the power transistor (M1) and integrated together therewith in a semiconductor substrate (9), and comprises a second transistor (M2) connected to the power transistor into a Darlington configuration and connected, in turn, to the Zener diode (Z1). The protection from overvoltages provided by the device (1) is very fast in operation, and can be implemented in integrated form at reduced cost and without introducing parasitic elements. <IMAGE></p> |
