发明名称 |
Process for the production of random access memories of the preloading static type |
摘要 |
The present invention relates to a process for the production of a random access memory of the preloading static type, in which use is made of a static random access memory constituted by MOS transistors formed from the memory flip-flop array and in which a particle or photon beam is applied to the said MOS transistors in such a way that the accumulated dose received exceeds a predetermined value.
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申请公布号 |
US5798288(A) |
申请公布日期 |
1998.08.25 |
申请号 |
US19950521864 |
申请日期 |
1995.08.31 |
申请人 |
COMMISSARIAT A L'ENERGIE ATOMIQUE |
发明人 |
GRENOUILLOUX, CHARLES;JOFFRE, FRANCIS |
分类号 |
G11C5/14;G11C7/00;G11C7/24;G11C11/412;G11C17/14;(IPC1-7):H01L21/823 |
主分类号 |
G11C5/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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