发明名称 |
MICRO HEATER AND ITS MANUFACTURE |
摘要 |
<p>PROBLEM TO BE SOLVED: To provide a micro heater of high detection accuracy wherein an internal stress is not applied to a heater wire and the heater wire is not distorted. SOLUTION: A heater wire 14 and a lead-out wire 15 are set at an upper face of a silicon substrate 10 which has a recessed part 10a with an opened upper face. At this time, an oxidization film 12 is formed at a lower face of each wire, thereby securing insulation from the substrate. The heater wire 14 is set at a position confronting to the recessed part and supported in a cantilever state to the substrate. The heater wire 14 is formed of single crystal silicon. Single crystal silicon is bonded via the oxidization film 12 to the silicon substrate, and therefore no internal stress is brought about. Surfaces of the heater wire 14, lead-out wire 15 are coated with a protecting film 16 of an oxidization film.</p> |
申请公布号 |
JPH10221144(A) |
申请公布日期 |
1998.08.21 |
申请号 |
JP19970034447 |
申请日期 |
1997.02.03 |
申请人 |
OMRON CORP;TOKYO GAS CO LTD |
发明人 |
SHIIKI MASAKAZU;OMI TOSHIHIKO;SATO FUMIHIKO;NAKAMURA KENICHI;KONDA NORIHIRO |
分类号 |
G01P5/12;G01F1/68;G01F1/688;G01F1/692;(IPC1-7):G01F1/68 |
主分类号 |
G01P5/12 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|