| 摘要 |
PROBLEM TO BE SOLVED: To provide a tunnel junction structure wherein the junction interface is difficult to move due to heat treatment. SOLUTION: A tunnel junction structure includes an n-type layer 13 formed by adding silicon as impurity to a material of a III-V compound semiconductor, a p-type layer 15 formed by adding carbon as impurity to a material of a III-V compound semiconductor, and a multiple additive layer 14 formed by adding silicon and carbon in respective impurity densities to a material of a III-V compound semiconductor between the p-type layer 15 and the n-type layer 13. The pn junction interface 18 is the interface between the multiple additive layer 14 and either the n-type layer 13 or the p-type layer 15 to which the same kind of impurity as the impurity of lower density among carbon and silicon added as a impurity to the multiple additive layer 14 is added. |
