发明名称 |
Solar cell and method for fabricating the same |
摘要 |
In a method for fabricating a solar cell, an amorphous silicon film of a first conductivity type is formed on a substrate, and nickel silicide is formed thereon. The amorphous silicon film is crystallized through heat treatment to obtain a crystalline silicon film of the first conductivity type. Residual nickel silicide on the surface of the crystalline silicon film of the first conductivity type is removed. Another crystalline silicon film of a second conductivity type is further formed on the surface of the crystalline silicon film of the first conductivity type.
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申请公布号 |
US5797999(A) |
申请公布日期 |
1998.08.25 |
申请号 |
US19960709505 |
申请日期 |
1996.09.06 |
申请人 |
SHARP KABUSHIKI KAISHA;SEMICONDUCTOR ENERGY LAB |
发明人 |
SANNOMIYA, HITOSHI;TOMITA, TAKASHI;YAMAZAKI, SHUNPEI;ARAI, YASUYUKI |
分类号 |
H01L31/04;H01L21/20;H01L31/068;H01L31/18;(IPC1-7):H01L31/036 |
主分类号 |
H01L31/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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