发明名称 Solar cell and method for fabricating the same
摘要 In a method for fabricating a solar cell, an amorphous silicon film of a first conductivity type is formed on a substrate, and nickel silicide is formed thereon. The amorphous silicon film is crystallized through heat treatment to obtain a crystalline silicon film of the first conductivity type. Residual nickel silicide on the surface of the crystalline silicon film of the first conductivity type is removed. Another crystalline silicon film of a second conductivity type is further formed on the surface of the crystalline silicon film of the first conductivity type.
申请公布号 US5797999(A) 申请公布日期 1998.08.25
申请号 US19960709505 申请日期 1996.09.06
申请人 SHARP KABUSHIKI KAISHA;SEMICONDUCTOR ENERGY LAB 发明人 SANNOMIYA, HITOSHI;TOMITA, TAKASHI;YAMAZAKI, SHUNPEI;ARAI, YASUYUKI
分类号 H01L31/04;H01L21/20;H01L31/068;H01L31/18;(IPC1-7):H01L31/036 主分类号 H01L31/04
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