| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a plasma cleaning device of a wafer capable of in-lining with down stream side device such as wire bonding device, etc., in excellent device efficiency and easy replaceability in case of model change. SOLUTION: A vacuum chamber 5 is composed of a cover part 4 free openably arranged on a base plate 3. An electrode 6 impressed with high frequency voltage from a high frequency power supply is composed of a lower electrode 6c an intermediate electrode 6b and an upper electrode 6a. The upper electrode 6a is set in the vacuum chamber 5, and also serves as a mounting unit of a substrate 21 to be sent to plasma cleaning. A projection 28 guiding the carrier of a wafer 21 is formed on the upper electrode 6a. The substrate 21 on finishing the plasma cleaning step slides over the upper electrode 6a guided by the projection 28 and is carried to a wire bonding device. In such a constitution, when the size of the substrate is changed by the model change of the wafer 21, the upper electrode 6a only is replaced.</p> |
