| 摘要 |
PROBLEM TO BE SOLVED: To surely remove a resist film by heating a substrate supporting stage positioned in a treatment chamber to a specific temperature and making an enriched oxone gas to act on a substrate on which the resist film is formed and which is supported in the heated substrate supporting stage. SOLUTION: A substrate carrying a resist film is treated in an ashing chamber 3 by adjusting the temperature ozone gas supplied to the chamber 3 approximately to the room temperature and a substrate supporting stage supporting the substrate in the chamber 3 is heated to a temperature of <=80 deg.C. The heating temperature of the substrate supporting stage is adjusted to <=80 deg.C, because the autolytic ability of ozone abruptly increases when the ambient temperature exceeds 80 deg.C. Therefore, the workability of resist removing work can be improved, because the resist film on the substrate can be removed surely while the temperature on the chamber 3 is maintained at a relatively low temperature and the highly enriched ozone gas can be handled as it is. |
