SURFACE EMISSION TYPE SEMICONDUCTOR LASER DEVICE AND ITS MANUFACTURE

摘要

PROBLEM TO BE SOLVED: To reduce the contact resistances of the electrodes of a semiconductor laser device by forming a heaving doped area containing an impurity of the same conductivity as that of a lower multilayered semiconductor reflecting film in a section where no optical waveguide is formed including the lower multilayered semiconductor reflecting film exposed in an opening. SOLUTION: A cylindrical light control area is formed by successively forming an n-type Al0.9 Ga0.1 As/Al0.3 Ga0.7 As upper multilayered semiconductor reflecting film 9 and an n-type GaAs protective layer 10 and etching off the film 9 and layer 10 except the parts of the film 9 and layer 10 above a light emitting area. The contact resistances of electrodes are reduced by etching off the film 9 from the partial surface of the removed area of the reflecting film 9 to the depth reaching the surface of a p-type lower multilayered semiconductor reflecting film 2 and forming a p-type impurity diffusion area 3 containing beryllium(Be) at a high carrier concentration of 1×10<19> cm<-3> on the surface of the reflecting film 2 and an ohmic contact with a p-side electrode 11 formed on the area 3.