| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device which is possessed of polysilicon films that are easily connected together, can be lessened in the number of manufacturing processes, shortened in production time, made compact enough in structure so as to be manufactured at a low cost, and enhanced in reliability. SOLUTION: A usual process where a first polysilicon film used for gate electrodes 32, 33, 321, and 331 and a second polysilicon film 7 formed on the first polysilicon film through the intermediary of an insulating film 5 are connected together and another process where impurities are injected into the second polysilicon film 7 are dispensed with, and a following process is carried out in place of the above processes as follows. Wirings 12 to 14 formed on a semiconductor substrate 1 and impurity diffusion regions 41 to 43, the first and second polysilicon film are electrically connected together through connection wirings 15 to 19 filled in contact holes provided to interlayer insulating films 5 and 9 at the same time when the contact holes are bored. |
