| 摘要 |
<p>An etching gas and chamber cleaning gas for Si films, SiO2 films, Si3N4 films or high-melting metal silicite films, which contains at least one gaseous fluorine compound selected from the group consisting of those of formulae (1) to (3): (1) CnFmH1OCxFyHz, wherein n and x each represents an integer of 1 to 5; m, y, 1 and z each represents an integer of 0 to 11; provided that m and y, or 1 and z do not represent 0 at the same time; (2) CaF2a+1OCF=CF2 and (3) CaF2a+1COOCH2CF3, wherein a represents an integer of 1 to 3. The etching gas and chamber cleaning gas do not cause global warming.</p> |
