| 摘要 |
PURPOSE:To selectively form a thin film only on the plane perpendicular to the surface of a substrate by applying high-frequency electric power to a substrate as well as to a target and regulating the value of the high-frequency electric power applied to the substrate at the time of forming a thin film on the surface of the substrate by a bias sputtering method. CONSTITUTION:A target 2 and a substrate 3 are disposed in a manner to be opposed to each other in a vacuum tank 1, and high-frequency electric power is applied to the target 2 from an electric power source 4 as usual and also high-frequency electric power is applied to the substrate 3 by means of an electric power source 5, and then, a thin film composed of the target material is formed on the substrate 3 by means of sputtering treatment. At this time, the electric power applied to the target 2 is kept constant and the high-frequency bias electric power applied to the substrate 3 is regulated, by which the formation of the thin film on the plane part at the substrate surface can be prevented and the selective formation of the thin film only on the plane perpendicular to the plane in a stepped part is made possible at the time when the stepped part exists at the substrate surface. By this method, the formation of nonreflective coating layer and multilayered film filter on the end faces of integration-type semiconductor laser or dielectric waveguide passage can be facilitated. |
