| 摘要 |
Production of a transistor, especially a MOS transistor, involves: (a) applying a first insulating layer (11) onto a first conductivity-type semiconductor substrate region (15); (b) applying a conductive layer (12) and a second insulating layer (13, 14) onto the first insulating layer (11), and then structuring these layers (12, 13, 14) by anisotropic etching; (c) implanting and driving-in a second conductivity-type dopant into the first conductivity-type region (15) to form a second conductivity type first zone (16a); (d) implanting and driving-in another second conductivity-type dopant to form a more heavily doped second conductivity-type second zone (16b); (e) applying and anisotropically back-etching a third insulating layer (17) down to the substrate (3), leaving one or more insulation regions (18); and (f) applying a metallisation layer (19). Also claimed is a transistor, especially a MOS-transistor, having: (i) a semiconductor substrate (3) with a first conductivity-type semiconductor region (15) and second conductivity-type first zones (16a); (ii) a first insulating layer (11) on the substrate surface between the first zones (16a); (iii) a conductive layer (12) and a second insulating layer (13, 14) on the first insulating layer (11); (iv) one or more insulation regions (18) adjacent to the conductive layer (12) on the substrate (3); and (v) two second conductivity-type second zones (16b) adjacent to, and of higher conductivity than, the first zone (16a).
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