| 摘要 |
A semiconductor memory device has a substrate with a transfer transistor formed thereon. The transfer transistor has drain and source regions with one of the source/drain regions electrically coupled to a charge storage capacitor. The charge storage capacitor includes a trunk-like conducting layer, at least one branch-like conducting layer, a dielectric layer and an upper conducting layer. The trunk-like conducting layer includes a lower trunk section, a middle trunk section and an upper trunk section. One end of the branch-like conducting layer is connected to an internal surface of the trunk-like conducting layer. The branch-like conducting layer together with the trunk-like conducting layer form the storage electrode of the charge storage capacitor. The upper conducting layer serves as an opposing electrode of the charge storage capacitor.
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