| 摘要 |
<p>A silicon carbide insulated gate power transistor is disclosed that demonstrates increased maximum voltage. The transistor comprises a field effect or insulated gate transistor with a protective region (23, 43) adjacent the insulated gate that has the opposite conductivity type from the source (14, 34) for protecting the gate insulator material (17, 37) from the degrading or breakdown effect of a large voltage applied across the device. The device optionally includes a current-enhancing layer (67, 83) having the opposite conductivity type from the protective region and positioned between the protective region and another first conductivity-type region of the transistor.</p> |
