| 摘要 |
PROBLEM TO BE SOLVED: To suppress degradation of transistor characteristics due to hot carriers by linking an N or P channel region with two materials having different work function in the vicinity of drain to form first and second gate electrodes and locating the forward end of a lightly doped diffused drain layer at a part of the second gate electrode. SOLUTION: First and second gate electrodes 6, 7 are formed by linking two materials having different work function. The region D of the second gate electrode 7 is formed slightly larger than the overlapped region of the drain junction and the gate electrode 6. Preferably, the difference of work function between the gate electrodes 6, 7 is on the order of IV or above. This arrangement realizes an MOSFET structure where the inverted threshold voltage in the vicinity of drain is shifted, by an amount corresponding to the difference of work function, in the negative or positive direction as compared with that of the N channel region. More specifically, the forward end of a lightly doped diffused drain layer 4 is located at a part of the second gate electrode 7. |
