| 摘要 |
PROBLEM TO BE SOLVED: To form a reflecting surface having high reflectance by forming an aluminum nitride intermediate layer on a substrate, whose cleavage is difficult, forming a light emitting element constituting layer on the intermediate layer, selectively etching the lower part of a layer constituting a resonator and cleaving the substrate. SOLUTION: On the substrate, whose cleavage is difficult, such as a saphire substrate 8 or the like, an intermediate layer 9 comprising aluminum nitride or the like is formed. On the intermediate layer 9, a clad layer, wherein an N-type GaN 10 is made to be the base, an active layer and the like, and a light emitting part comprising the clad layer and furthermore an N-type GaN and the like are deposited. Thereafter, the lower part of the intermediate layer 9 constituting a resonator is selectively etched, and the intermediate layer 9 is removed. One part of the part, which becomes the resonator, is floated in the physical cantilever shape, and a cleavage surface 15 is formed. Thus, the reflecting surface having the high reflectance can be formed, and the threshold- value current can be lowered. |
