发明名称 |
Current memory cell having bipolar transistor configured as a current source and using field effect transistor (FET) for current trimming |
摘要 |
A current memory cell comprises a first bipolar transistor providing a current source and coupled to the emitters of a second and a third bipolar transistor, the latter forming the storage elements of the memory cell. The memory cell is calibrated, to avoid mismatch between the second and third transistors, by adjustment of the current source via a parallel arrangement of a resistor and a field effect transistor in the emitter circuit of the first transistor.
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申请公布号 |
US5793231(A) |
申请公布日期 |
1998.08.11 |
申请号 |
US19970844189 |
申请日期 |
1997.04.18 |
申请人 |
NORTHERN TELECOM LIMITED |
发明人 |
WHITTAKER, EDWARD JOHN WEMYSS |
分类号 |
G05F3/22;G11C27/02;H03M1/10;H03M1/74;(IPC1-7):H03K17/00;H03M1/80 |
主分类号 |
G05F3/22 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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